发明名称 |
NON-VOLATILE MEMORY (NVM) WITH ADAPTIVE WRITE OPERATIONS |
摘要 |
A method of performing a write operation on memory cells of a memory array includes applying a first plurality of pulses the write operation on the memory cells in accordance with a first predetermined ramp rate, wherein the first plurality of pulses is a predetermined number of pulses; performing a comparison of a threshold voltage of a subset of the memory cells with an interim verify voltage; and if a threshold voltage of any of the subset of memory cells fails the comparison with the interim verify voltage, continuing the write operation by applying a second plurality of pulses on the memory cells in accordance with a second predetermined ramp rate which has an increased ramp rate as compared to the first predetermined ramp rate. |
申请公布号 |
US2014078829(A1) |
申请公布日期 |
2014.03.20 |
申请号 |
US201213616169 |
申请日期 |
2012.09.14 |
申请人 |
HE CHEN;EGUCHI RICHARD K. |
发明人 |
HE CHEN;EGUCHI RICHARD K. |
分类号 |
G11C16/06 |
主分类号 |
G11C16/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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