发明名称 |
Solid-state imaging device |
摘要 |
A solid-state imaging device includes semiconductor substrate; a plurality of photoelectric conversion sections of n-type that are formed at an upper part of semiconductor substrate and arranged in a matrix; output circuit that is formed on a charge detection surface that is one surface of semiconductor substrate and detects charges stored in photoelectric conversion sections; a plurality of isolating diffusion layers of a p-type that are formed under output circuit and include high concentration p-type layers adjacent to respective photoelectric conversion sections; and color filters formed on a light incident surface that is the other surface opposing the one surface of semiconductor substrate and transmit light with different wavelengths. Shapes of respective photoelectric conversion sections correspond to color filters and differ depending on the high concentration p-type layer configuring isolating diffusion layer. |
申请公布号 |
US8680640(B2) |
申请公布日期 |
2014.03.25 |
申请号 |
US201213462895 |
申请日期 |
2012.05.03 |
申请人 |
MORI MITSUYOSHI;OKINO TORU;HIROSE YUTAKA;KATO YOSHIHISA;PANASONIC CORPORATION |
发明人 |
MORI MITSUYOSHI;OKINO TORU;HIROSE YUTAKA;KATO YOSHIHISA |
分类号 |
H01L27/148 |
主分类号 |
H01L27/148 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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