发明名称 |
Semiconductor device and manufacturing method thereof |
摘要 |
According to one embodiment, a semiconductor device includes an element region partitioned by an isolation region in a semiconductor substrate, and a source region and a drain region formed in a surface layer of the element region by being isolated by a gate trench along a predetermined direction across the element region. The semiconductor device includes a gate electrode formed to reach a position deeper than the source region and the drain region by embedding at least part thereof in the gate trench with a gate dielectric film interposed therebetween. An interface in the drain region, which is in contact with the gate dielectric film, includes a projection projecting toward the gate electrode side. |
申请公布号 |
US8680612(B2) |
申请公布日期 |
2014.03.25 |
申请号 |
US201213601400 |
申请日期 |
2012.08.31 |
申请人 |
IZUMIDA TAKASHI;AOKI NOBUTOSHI;KABUSHIKI KAISHA TOSHIBA |
发明人 |
IZUMIDA TAKASHI;AOKI NOBUTOSHI |
分类号 |
H01L29/10;H01L29/423;H01L29/78 |
主分类号 |
H01L29/10 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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