发明名称 |
Structure and process for conductive contact integration |
摘要 |
A semiconductor structure including a highly reliable high aspect ratio contact structure in which key-hole seam formation is eliminated is provided. The key-hole seam formation is eliminated in the present invention by providing a densified noble metal-containing liner within a high aspect ratio contact opening that is present in a dielectric material. The densified noble metal-containing liner is located atop a diffusion barrier and both those elements separate the conductive material of the inventive contact structure from a conductive material of an underlying semiconductor structure. The densified noble metal-containing liner of the present invention is formed by deposition of a noble metal-containing material having a first resistivity and subjecting the deposited noble metal-containing material to a densification treatment process (either thermal or plasma) that decreases the resistivity of the deposited noble metal-containing material to a lower resistivity. |
申请公布号 |
US8679970(B2) |
申请公布日期 |
2014.03.25 |
申请号 |
US20080124698 |
申请日期 |
2008.05.21 |
申请人 |
YANG CHIH-CHAO;GIGNAC LYNNE M.;INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
YANG CHIH-CHAO;GIGNAC LYNNE M. |
分类号 |
H01L23/48;H01L21/02;H01L21/768 |
主分类号 |
H01L23/48 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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