| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for producing a SiC single crystal that enables a stable growth of the SiC single crystal on growing the SiC single crystal using a producing apparatus with a heat insulator disposed around a crucible.SOLUTION: A Si absorbing step is performed by providing a vessel body 2a in which an Si containing material 21 is charged and a lid 2b as a crucible 2, disposing a heat insulator 20 of graphite without Si absorbed at the circumference of the crucible 2 so that it surrounds the circumference of the crucible 2, heating the Si containing material 21 by heating the crucible 2 to make the heat insulator 20 absorb a sublimation gas leaked from the crucible 2. Then, a growing step for growing the SiC single crystal on a seed crystal is performed by providing a crucible in which a powdery raw material is charged in the vessel body 2a and the seed crystal is disposed on a pedestal 3 formed on the lid 2b as the crucible 2, and heating the crucible 2 with the Si absorbed heat insulator 20 obtained by the Si absorbing step disposed at the circumference of the crucible 2 so that it surrounds the circumference of the crucible 2. |
