发明名称 MRAM FIELD DISTURB DETECTION AND RECOVERY
摘要 A method and memory device is provided for reading data from an ECC word of a plurality of reference bits associated with a plurality of memory device bits and determining if a double bit error in the ECC word exists. The ECC word may be first toggled twice and the reference bits reset upon detecting the double bit error.
申请公布号 KR20140051864(A) 申请公布日期 2014.05.02
申请号 KR20137034683 申请日期 2012.05.31
申请人 EVERSPIN TECHNOLOGIES, INC. 发明人 ANDRE THOMAS;ALAM SYED M.;ENGEL BRADLEY;BUTCHER BRIAN
分类号 G06F11/10 主分类号 G06F11/10
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