发明名称 |
MRAM FIELD DISTURB DETECTION AND RECOVERY |
摘要 |
A method and memory device is provided for reading data from an ECC word of a plurality of reference bits associated with a plurality of memory device bits and determining if a double bit error in the ECC word exists. The ECC word may be first toggled twice and the reference bits reset upon detecting the double bit error. |
申请公布号 |
KR20140051864(A) |
申请公布日期 |
2014.05.02 |
申请号 |
KR20137034683 |
申请日期 |
2012.05.31 |
申请人 |
EVERSPIN TECHNOLOGIES, INC. |
发明人 |
ANDRE THOMAS;ALAM SYED M.;ENGEL BRADLEY;BUTCHER BRIAN |
分类号 |
G06F11/10 |
主分类号 |
G06F11/10 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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