SYSTEMES DE DEPOT AYANT DES PORTES D'ACCES A DES EMPLACEMENTS SOUHAITABLES, ET PROCEDES RELATIFS

摘要

The system (100) has a reaction chamber (102) that defines a top wall, bottom wall and side wall. A gas injection device (110) injects process gases into the reaction chamber. A vacuum device draws the process gases through the reaction chamber and evacuates the process gases out of the reaction chamber. A workpiece substrate (116) is loaded into reaction chamber and onto substrate support structure (114), and unloaded from the substrate support structure through the access gate. An independent claim is included for method of depositing semiconductor material on a workpiece substrate.