| 摘要 |
<p>The present invention proposes a method of easily manufacturing a semiconductor device which prevents disconnection or the difference of the layer thickness of a source electrode or a drain electrode. The present invention includes a semiconductor layer which is formed on an insulating substrate, a first insulating layer which is formed on the semiconductor layer, a gate electrode which is formed on the first insulating layer, a second insulating layer which is formed on the gate electrode, an opening part which reaches the semiconductor layer which is formed on at least the first insulating layer and the second insulating layer, and a step difference which is formed in the lateral surface of the second insulating layer in the opening part.</p> |
