发明名称 |
METHOD OF MANUFACTURING LIGHT EMITTING DIODE AND LIGHT EMITTING DIODE MANUFACTURED THEREBY |
摘要 |
There is provided a method of manufacturing a light emitting diode and a light emitting diode manufactured by the same. The method includes growing a first conductivity type nitride semiconductor layer and an undoped nitride semiconductor layer on a substrate sequentially in a first reaction chamber; transferring the substrate having the first conductivity type nitride semiconductor layer and the undoped nitride semiconductor layer grown thereon to a second reaction chamber; growing an additional first conductivity type nitride semiconductor layer on the undoped nitride semiconductor layer in the second reaction chamber; growing an active layer on the additional first conductivity type nitride semiconductor layer; and growing a second conductivity type nitride semiconductor layer on the active layer. |
申请公布号 |
US2014147954(A1) |
申请公布日期 |
2014.05.29 |
申请号 |
US201414167877 |
申请日期 |
2014.01.29 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
LEE DONG JU;LEE HEON HO;SHIM HYUN WOOK;KIM YOUNG SUN |
分类号 |
H01L33/00 |
主分类号 |
H01L33/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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