METHOD FOR FABRICATING VERTICAL LIGHT EMITTING DIODE (VLED) STRUCTURE USING A LASER PULSE TO REMOVE A CARRIER SUBSTRATE

摘要

A method for fabricating a vertical light-emitting diode (VLED) structure includes the steps of providing a carrier substrate, and forming a semiconductor structure on the carrier substrate having a p-type confinement layer, a multiple quantum well (MQW) layer in electrical contact with the p-type confinement layer configured to emit electromagnetic radiation, and an n-type confinement layer in electrical contact with the multiple quantum well (MQW) layer. The method also includes the steps of removing the carrier substrate using a laser pulse to expose an inverted surface of the n-type confinement layer, and forming a metal contact on the surface of the n-type confinement layer.

主权项

1. A method for fabricating a vertical light-emitting diode (VLED) structure comprising:
providing a carrier substrate; forming a semiconductor structure on the carrier substrate comprising a p-type confinement layer, a multiple quantum well (MQW) layer in electrical contact with the p-type confinement layer configured to emit electromagnetic radiation, and an n-type confinement layer in electrical contact with the multiple quantum well (MQW) layer; removing the carrier substrate using a laser pulse to expose an inverted surface of the n-type confinement layer; and forming a metal contact on the inverted surface of the n-type confinement layer.