发明名称 SINGLE PATTERN HIGH PRECISION CAPACITOR
摘要 An integrated circuit contains a high precision capacitor having a bottom plate, a dielectric layer over the bottom plate, a capacitor opening in the dielectric layer exposing, and not overlapping, the bottom plate, a capacitor dielectric layer covering sidewalls and a bottom of the capacitor opening, a top plate covering the capacitor dielectric layer in the capacitor opening, and a capacitor planarizing dielectric layer covering the capacitor top plate in the capacitor opening. A top surface of the capacitor planarizing dielectric layer and a top edge of the capacitor top plate are substantially coplanar. The top plate does not extend laterally beyond the capacitor opening. A method of forming the integrated circuit the high precision capacitor is also disclosed.
申请公布号 US2014159201(A1) 申请公布日期 2014.06.12
申请号 US201314077497 申请日期 2013.11.12
申请人 Texas Instruments Incorporated 发明人 KELLER Stephen Alan;HUBER Michael LeRoy
分类号 H01L49/02 主分类号 H01L49/02
代理机构 代理人
主权项 1. An integrated circuit, comprising: a first dielectric layer; a bottom plate of a high precision capacitor disposed over said dielectric layer; a second dielectric layer disposed over said bottom plate and said first dielectric layer, said second dielectric layer having a capacitor opening over said bottom plate, so that said bottom plate extends past said capacitor opening on all sides; a capacitor dielectric layer of said high precision capacitor disposed on said bottom plate in said capacitor opening and disposed on said second dielectric layer on sidewalls of said capacitor opening, extending to a top of said capacitor opening; a top plate of said high precision capacitor disposed on said capacitor dielectric layer, covering said capacitor dielectric layer on said sidewalls of said capacitor opening and covering said capacitor dielectric layer over said bottom plate in said capacitor opening; and a capacitor planarization layer disposed in said capacitor opening over said top plate, wherein a top surface of said capacitor planarization layer and a top edge of said top plate are substantially coplanar and said top plate does not extend laterally beyond said capacitor opening.
地址 Dallas TX US