SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD

摘要

In aspects of the invention, an n-type epitaxial layer that forms an n− type drift layer is formed on the upper surface of an n-type semiconductor substrate formed by being doped with a high concentration of antimony. A p-type anode layer is formed on a surface of the n− type drift layer. An n-type contact layer is formed with an impurity concentration in the same region as the impurity concentration of the n-type cathode layer, or higher than the impurity concentration of the n-type cathode layer, on the lower surface of the n-type cathode layer. A cathode electrode is formed so as to be in contact with the n-type contact layer. The n-type contact layer is doped with phosphorus and, without allowing complete recrystallization using a low temperature heat treatment of 500° C. or less, lattice defects are allowed to remain.

主权项

1. A semiconductor device comprising:
a first conductivity type semiconductor substrate; a first conductivity type contact layer, provided on the back surface of the semiconductor substrate, with a concentration higher than that of the semiconductor substrate; and a first electrode in contact with the contact layer, wherein the contact layer is doped with phosphorus, the maximum carrier concentration of the contact layer is greater than 1.0×1018/cm3 and less than 5.0×1019/cm3, and the diffusion depth of the contact layer from the interface with the first electrode into the semiconductor substrate is 0.5 μm or less.