发明名称 SUBSTRATE PROCESSING APPARATUS, AND GAS FLOW CONTROL UNIT FOR SUBSTRATE PROCESSING APPARATUS
摘要 <p>The present invention relates to a substrate processing device and, more specifically, to a gas flow control device of a substrate processing device and a substrate processing device including the device capable of controlling the flow of mixed gas into a processing space of the substrate processing device. The present invention is a mixed gas flow control device of the substrate processing device including a process chamber forming a sealed processing space and a gas spray part installed in the processing space to spray mixed gas for substrate processing into the processing space. Disclosed is the mixed gas flow control device of the substrate processing device including a pressure measuring part connected to a mixed gas supply device forming and supplying mixed gas of liquid processing materials and carrier gas to measure the pressure of the mixed gas supplied by the mixed gas supply device, a transforming part having an end connected to the pressure measuring part and having the other end connected to the gas spray part to transform the pressure of the mixed gas passing through the pressure measuring part into preset pressure based on the pressure measured in the pressure measuring part, and a control part controlling the transforming part to transform the pressure of the mixed gas passing through the pressure measuring part into the preset pressure based on the pressure measured in the pressure measuring part.</p>
申请公布号 KR20140142940(A) 申请公布日期 2014.12.15
申请号 KR20130064721 申请日期 2013.06.05
申请人 WONIK IPS CO., LTD. 发明人 BAE, JUN SUNG;LEE, WUK JAE;KIM, MIN WAN
分类号 H01L21/02;H01L21/205;H01L21/3065 主分类号 H01L21/02
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