发明名称 |
Pixel array and fabrication thereof |
摘要 |
A pixel array is disclosed that comprises a storage capacitor, and the pixel array is coated with a color filter area, where the color filter areas comprises a first color filter area of the storage capacitor and a second color filter area of the regions beyond the storage capacitor. The thickness of the first color filter area is bigger than the thickness of the second color filter area, and the thickness of the regions beyond the storage capacitor is equivalent to the minimum value of thickness that retains the color chroma of the pixel array, which enables a pixel to hold the desired potential within a frame cycle while the area of the storage capacitor is diminished. The invention further provides a fabrication method of the pixel array. |
申请公布号 |
US8917364(B2) |
申请公布日期 |
2014.12.23 |
申请号 |
US201113378048 |
申请日期 |
2011.11.09 |
申请人 |
Shenzhen China Star Optoelectronics Technology Co., Ltd. |
发明人 |
Chen Hsiao-hsien |
分类号 |
G02F1/1333;G02F1/1335;G02F1/1362 |
主分类号 |
G02F1/1333 |
代理机构 |
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代理人 |
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主权项 |
1. A pixel array, comprising a storage capacitor, characterized in that:
the pixel array is coated with a color filter area, wherein the color filter area comprises a first color filter area of the storage capacitor and a second color filter area of regions beyond the storage capacitor; wherein a thickness of the first color filter area is bigger than a thickness of the second color filter area, and a thickness of the second color filter area of the regions beyond the storage capacitor is equivalent to the minimum value of thickness that retains a color chroma of the pixel array that enables a pixel unit to hold a desired potential within a frame cycle while an area of the storage capacitor is diminished; wherein the second color filter area is formed by irradiation through a gray-tone or a half-tone mask. |
地址 |
Guangdong CN |