Light emitting device, light emitting device package, method of manufacturing light emitting device, and lighting system

摘要

A light emitting device includes a first light extraction structure including a reflective layer and a pattern; an ohmic layer on the first light extraction structure; a second conductive type semiconductor layer on the ohmic layer; an active layer on the second conductive type semiconductor layer; and a first conductive type semiconductor layer on the active layer, wherein the pattern has a refractive index that is higher than that of air and lower than that of the second conductive type semiconductor layer.

主权项

1. A light emitting device comprising:
a second electrode layer; a reflective layer on the second electrode layer; a first light extraction structure including the reflective layer and a protruding pattern; an ohmic layer on the first light extraction structure; a second conductive type semiconductor layer on the ohmic layer; an active layer on the second conductive type semiconductor layer; a first conductive type semiconductor layer on the active layer; and a first electrode layer on the first conductive type semiconductor layer, wherein the protruding pattern has a refractive index that is higher than that of air and lower than that of the second conductive type semiconductor layer, wherein the ohmic layer and the protruding pattern have the same material, wherein the protruding pattern is formed of at least one selected from the group consisting of GZO, RuOx, and IrOx, and wherein the first electrode layer is disposed below a top most surface of the first conductive type semiconductor layer.