| 发明名称 | Thin film transistor and organic light-emitting display apparatus | ||
| 摘要 | A thin film transistor includes a substrate, a gate electrode on the substrate, an active layer spaced from the gate electrode, a source electrode and a drain electrode spaced from the gate electrode and coupled to the active layer, a gate wiring at a same layer as the gate electrode and coupled to the gate electrode, and first conductive members electrically coupled to, and overlapping, the gate wiring. | ||
| 申请公布号 | US8916878(B2) | 申请公布日期 | 2014.12.23 |
| 申请号 | US201313797670 | 申请日期 | 2013.03.12 |
| 申请人 | Samsung Display Co., Ltd. | 发明人 | Kim Jung-Bae;Park Yong-Sung;Lee Wang-Jo;Lee Hae-Yeon;Kim Keum-Nam |
| 分类号 | G09G3/32;H01L27/12;H01L29/786;H01L51/52;H01L27/32 | 主分类号 | G09G3/32 |
| 代理机构 | Christie, Parker & Hale, LLP | 代理人 | Christie, Parker & Hale, LLP |
| 主权项 | 1. A thin film transistor comprising: a substrate; a gate electrode on the substrate; an active layer spaced from the gate electrode; a source electrode and a drain electrode spaced from the gate electrode and coupled to the active layer; a gate wiring at a same layer as the gate electrode and coupled to the gate electrode; and first conductive members electrically coupled to, and overlapping, the gate wiring, wherein the first conductive members comprise at least two first conductive members and the gate electrode is in between the two first conductive members. | ||
| 地址 | Yongin-si KR | ||