Method of forming via hole

摘要

The present invention provides a method of forming via holes. First, a substrate is provided. A plurality of first areas is defined on the substrate. A dielectric layer and a blocking layer are formed on the substrate. A patterned photoresist layer is formed on the blocking layer. The patterned photoresist layer includes a plurality of holes arranged in a regular array wherein the area of the hole array is greater than those of the first areas. The blocking layer in the first areas is removed by using the patterned photoresist layer as a mask. Lastly, the dielectric layer is patterned to form at least a via hole in the dielectric layer in the first area.

主权项

1. A method of forming via hole, comprising:
providing a substrate, wherein at least a first region is defined on the substrate; forming a dielectric layer and a blocking layer on the substrate, wherein the blocking layer is disposed on the dielectric layer; removing a portion of the blocking layer in the first region; forming a patterned photoresist layer on the blocking layer such that a sidewall of the blocking layer is completely covered by the patterned photoresist layer, wherein the patterned photoresist comprises a plurality of holes arranged in a regular array wherein the area of the hole array is greater than that of the first region, and the dielectric layer is exposed by the holes; and patterning the dielectric layer by using the patterned photoresist layer as a mask to form at least a via hole in the dielectric layer in the first region.