| 发明名称 |
METAL-OXIDE-SEMICONDUCTOR (MOS) DEVICES WITH INCREASED CHANNEL PERIPHERY AND METHODS OF MANUFACTURE |
| 摘要 |
A semiconductor device includes a silicon carbide (SiC) drift layer disposed on a (0001) oriented SiC substrate. The SiC drift layer has a non-planar surface including a plurality of repeating features that are oriented parallel to a length of a channel of the semiconductor device. Further, the channel region is disposed in a particular crystallographic plane of the SiC drift layer. |
| 申请公布号 |
US2015008449(A1) |
申请公布日期 |
2015.01.08 |
| 申请号 |
US201313934053 |
申请日期 |
2013.07.02 |
| 申请人 |
General Electric Company |
发明人 |
Bolotnikov Alexander Viktorovich;Losee Peter Almern |
| 分类号 |
H01L29/16;H01L29/06;H01L29/78;H01L21/22 |
主分类号 |
H01L29/16 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor device, comprising:
a silicon carbide (SiC) drift layer disposed on a (0001) oriented SiC substrate, wherein the SiC drift layer comprises a non-planar surface comprising a plurality of repeating features that are oriented parallel to a length of a channel of the semiconductor device, and wherein the channel is disposed in a particular crystallographic plane of the SiC drift layer. |
| 地址 |
Schenctady NY US |
