Morphology control of ultra-thin MeOx layer

摘要

A nonvolatile memory device contains a resistive switching memory element with improved device switching performance and life and methods for forming the same. The nonvolatile memory device has a first layer on a substrate, a resistive switching layer on the first layer, and a second layer. The resistive switching layer is disposed between the first layer and the second layer and the resistive switching layer comprises a material having the same morphology as the top surface of the first layer. A method of forming a nonvolatile memory element in a ReRAM device includes forming a resistive switching layer on a first layer and forming a second layer, so that the resistive switching layer is disposed between the first layer and the second layer. The resistive switching layer comprises a material formed with the same morphology as the top surface of the first layer.

主权项

1. A device comprising:
a first layer operable as a first electrode; a second layer operable as a resistive switching layer
wherein the second layer is configured to switching between a low resistive state and a high resistive state,wherein the second layer directly interfaces the first layer,wherein a morphology of the first layer is same as a morphology of at least a portion of the second layer directly interfacing the first layer, andwherein the morphology of the first layer is one of crystalline, polycrystalline, or amorphous; and a third layer operable as a second electrode, wherein the second layer is disposed between the first layer and the third layer.