| 摘要 |
<p>The present invention relates to a group 3 nitride-based semiconductor light emitting diode. The present invention provides the group 3 nitride-based semiconductor light emitting diode including an ohmic contact current spreading layer forming an electric conductivity thin film structure on the upper unit of an upper nitride-based clad layer, which is a light emitting surface of the group 3 nitride-based semiconductor light emitting diode. The present invention increases the entire performance of the light emitting diode such as a driving voltage and external light emitting efficiency.</p> |
