| 发明名称 |
IMAGE SENSOR AND METHOD FOR MANUFACTURING THE SAME |
| 摘要 |
Provided are an image sensor and a method of manufacturing the same. The image sensor includes a support substrate, a wire layer disposed under the support substrate, an epitaxial layer disposed under the wire layer, and a photodiode disposed in the epitaxial layer. The epitaxial layer has an off angle of about 0.3° to about 1.5° with respect to a [001] crystal orientation. |
| 申请公布号 |
US2015014754(A1) |
申请公布日期 |
2015.01.15 |
| 申请号 |
US201214379280 |
申请日期 |
2012.11.29 |
| 申请人 |
LG Siltron Inc. |
发明人 |
Lim Hongkang |
| 分类号 |
H01L27/146;H01L31/036 |
主分类号 |
H01L27/146 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. An image sensor comprising:
a support substrate; a wire layer disposed under the support substrate; an epitaxial layer disposed under the wire layer; and a photodiode disposed in the epitaxial layer, wherein the epitaxial layer has an off angle of about 0.3° to about 1.5° with respect to a [001] crystal orientation. |
| 地址 |
Gyeongsangbuk-do KR |
