发明名称 |
TEXTURED PHOSPHOR CONVERSION LAYER LIGHT EMITTING DIODE |
摘要 |
This invention is related to LED Light Extraction for optoelectronic applications. More particularly the invention relates to (Al, Ga, In)N combined with optimized optics and phosphor layer for highly efficient (Al, Ga, In)N based light emitting diodes applications, and its fabrication method. A further extension is the general combination of a shaped high refractive index light extraction material combined with a shaped optical element. |
申请公布号 |
US2015014732(A1) |
申请公布日期 |
2015.01.15 |
申请号 |
US201414483501 |
申请日期 |
2014.09.11 |
申请人 |
THE REGENTS OF THE UNIVERSITY OF CALIFORNIA |
发明人 |
DeMille Natalie Fellows;DenBaars Steven P.;Nakamura Shuji |
分类号 |
H01L33/50;H01L33/32;H01L33/00;H01L33/62 |
主分类号 |
H01L33/50 |
代理机构 |
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代理人 |
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主权项 |
1. A light emitting device, comprising:
an LED chip emitting light at a first wavelength, wherein the emitted light is extracted from both front and back sides of the LED chip; a lead frame to which the LED chip is attached, wherein the LED chip resides on or above a transparent plate in the lead frame that allows the emitted light to be extracted out of the LED chip through the transparent plate in the lead frame; and a phosphor for converting the light emitted by the LED chip at the first wavelength to a second wavelength. |
地址 |
Oakland CA US |