| 摘要 |
An optoelectronic semiconductor chip (10) is specified, the former comprising: – a p-type semiconductor region (4), – an n-type semiconductor region (6), an active layer (5) embodied as a multi-quantum well structure (7) arranged between the p-type semiconductor region (4) and the n-type semiconductor region (6), wherein the multi-quantum well structure (7) includes a plurality of alternating quantum well layers (71) and barrier layers (72, 73), wherein at least one barrier layer, which is arranged closer to the p-type semiconductor region (4) than to the n-type semiconductor region (6) is a high barrier layer (73) which has an electronic band gap (Ehb) which is greater than an electronic band gap (Eb) of the remaining barrier layers (72). |
