CHEMICAL MECHANICAL POLISHING COMPOSITION HAVING CHEMICAL ADDITIVES AND METHODS FOR USING SAME

摘要

The present invention relates to chemical mechanical polishing (CMP) compositions containing chemical additives and methods for using the CMP compositions. The CMP composition comprises an abrasive; a chemical additive; a liquid carrier; optionally an oxidizing agent; a pH buffering agent and a salt; and a surfactant and a biocide. The CMP compositions and the methods for using the same provide an enhanced removing rate for ″SiC″, SiN″ and ″SiC_xN_y″ films; and a tunable removal selectivity for ″SiC″ with respect to SiO_2, ″SiC″ with respect to ″SiN″, or ″SiC_xN_y″ with respect to SiO_2; (wherein x ranges from 0.1 wt% to 55 wt%, and y ranges from 0.1 wt% to 32 wt%).