LOW REFLECTION ELECTRODE FOR PHOTOVOLTAIC DEVICES

摘要

A method for forming a photovoltaic device includes forming a photovoltaic absorption stack on a substrate including one or more of I-III-VI2 and I2-II-IV-VI4 semiconductor material. A transparent conductive contact layer is deposited on the photovoltaic absorption stack at a temperature less than 200 degrees Celsius. The transparent conductive contact layer has a thickness of about one micron and is formed on a front light-receiving surface. The surface includes pyramidal structures due to an as deposited thickness. The transparent conductive contact layer is wet etched to further roughen the front light-receiving surface to reduce reflectance.

主权项

1. A method for forming a photovoltaic device, comprising:
forming a photovoltaic absorption stack on a substrate including one of more of III-VI2 and I2-II-IV-VI4 semiconductor material; depositing a transparent conductive contact layer on the photovoltaic absorption stack at a temperature less than 200 degrees Celsius, the transparent conductive contact layer having a thickness of about one micron and being formed on a front light-receiving surface, the surface including pyramidal structures due to an as deposited thickness; and wet etching the transparent conductive contact layer to further roughen the front light-receiving surface to reduce reflectance.