发明名称 |
NON-VOLATILE MEMORY WITH LINEAR HOT-ELECTRON INJECTION TECHNIQUE AND STRAIN GAUGE USING THE SAME |
摘要 |
A linear hot-electron injection technique is provided for a non-volatile memory arrangement. The non-volatile memory is comprised of: a floating gate transistor; a capacitor with a first terminal electrically coupled to the gate node of the floating gate transistor; a current reference circuit electrically coupled to the source node of the floating gate transistor; and a feedback circuit electrically coupled between the source node of the floating gate transistor and a second terminal of the capacitor. The feedback circuit operates to adjust a voltage at the gate node of the floating gate transistor in accordance with a source-to-drain voltage across the floating gate transistor. |
申请公布号 |
US2015027237(A1) |
申请公布日期 |
2015.01.29 |
申请号 |
US201314380122 |
申请日期 |
2013.01.28 |
申请人 |
Board of Trustees of Michigan State University |
发明人 |
Chakrabartty Shantanu |
分类号 |
H01L41/113;A61B5/00;G11C27/00;G11C16/34;G01B7/16;H01L27/20;H01L29/788 |
主分类号 |
H01L41/113 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
East Lansing MI US |