DEVICES, SYSTEMS, AND METHODS RELATED TO FORMING THROUGH-SUBSTRATE VIAS WITH SACRIFICIAL PLUGS

摘要

Methods for making semiconductor devices are disclosed herein. A method configured in accordance with a particular embodiment includes forming one or more openings in a front side of the semiconductor device and forming sacrificial plugs in the openings that partially fill the openings. The method further includes further filling the partially filled openings with a conductive material, where individual sacrificial plugs are generally between the conductive material and a substrate of the semiconductor device. The sacrificial plugs are exposed at a backside of the semiconductor device. Contact regions can be formed at the backside by removing the sacrificial plugs.

主权项

1. A semiconductor device, comprising:
a substrate having an opening extending from a front side of the substrate to a backside of the substrate; and a through-substrate via that extends through the opening, wherein the thorough-substrate via includes:
a first conductive material extending through the opening at the front side of the substrate;a second conductive material extending through the opening at the backside of the substrate; andat least one barrier/seed material between the first conductive material and the second conductive material.