| 摘要 |
The present invention relates to a method of forming a desired pattern on a substrate comprising the steps of a) generating an atomic or molecular beam, in particular a beam of He atoms; b) providing a mask having a desired pattern such as a Fourier transform of the desired pattern on the substrate; c) directing the atomic or molecular beam through the patterned mask onto a substrate, whereby a pattern is formed on the substrate by interaction with the proportion of the atomic or molecular beam which penetrates through the mask, which pattern is based on the pattern of the mask, wherein the patterned mask is prepared by a method comprising d) providing a porous starting mask material having openings of a size which allow the atomic or molecular beam to penetrate through; e) creating the desired pattern on the mask by filling a proportion of the openings of the mask which thereby become non-transparent for the atomic or molecular beam. The method of the present invention is useful for preparing conducting circuit structures (micro-chips) or microelectromechanical systems (MEMS) or structures for micro/nano fluidics or nanostructured surfaces in general, ie. hydrophobic or hydrophilic surfaces or reflective/antireflective surfaces. |
