发明名称 |
COMPOSITIONS AND METHODS FOR CMP OF SILICON OXIDE, SILICON NITRIDE, AND POLYSILICON MATERIALS |
摘要 |
The present invention provides a chemical mechanical polishing method for polishing a substrate comprising silicon dioxide, silicon nitride, and polysilicon. The method comprises abrading a surface of the substrate with a CMP composition to remove at least some silicon dioxide, silicon nitride and polysilicon therefrom. The CMP composition comprising a particulate ceria abrasive suspended in an aqueous carrier having a pH of about 3 to 9.5 and containing a cationic polymer; wherein the cationic polymer consists of a quaternary methacryloyloxyalkylammonium polymer. |
申请公布号 |
WO2015013162(A1) |
申请公布日期 |
2015.01.29 |
申请号 |
WO2014US47365 |
申请日期 |
2014.07.21 |
申请人 |
CABOT MICROELECTRONICS CORPORATION |
发明人 |
DINEGA, DMITRY;MOEGGENBORG, KEVIN;WARD, WILLIAM;MATEJA, DANIEL |
分类号 |
H01L21/304 |
主分类号 |
H01L21/304 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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