| 摘要 |
PROBLEM TO BE SOLVED: To provide a developer for a photosensitive resist material and a pattern forming method using the same, the developer being used for development to prevent a resist film of a photosensitive resist material, particularly a chemically amplified positive resist material from swelling during the development to prevent collapse of a pattern and generation of a bridge defect to provide a pattern having small edge roughness.SOLUTION: A developer for a photosensitive resist material is provided, comprising a cyclic ammonium hydroxide expressed by general formula (1). In the formula, Rand Reach represent a linear, branched or cyclic alkyl group having 1 to 6 carbon atoms or an alkenyl or alkynyl group having 2 to 10 carbon atoms; and Rrepresents a methylene group, an ethylene group, -O-CH-, -S-CH-, or -NH-CH-. |
