TUNNEL EFFECT TRANSISTORS BASED ON ELONGATED MONOCRYSTALLINE NANO STRUCTURE HAVING HETERO-STRUCTURE

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device structure of low power consumption using a monocrystalline nanostructure.SOLUTION: A TFET, based on an elongated monocrystalline nanostructure having a hetero-structure made of different semiconducting materials (for example, germanium (Ge)), is used to achieve a higher ON-current. A elongated monocrystalline nanostructure 9 made of the different semiconducting materials, serving as a source (or alternatively drain) region of the TFET is introduced. Introduction of a hetero part prevents lattice mismatch between silicon and germanium from resulting in a highly defective interface. Thereby, dynamic power reduction as well as static power reduction can be achieved.