| 摘要 |
PROBLEM TO BE SOLVED: To provide a non-volatile memory cell capable of easily performing store/recall operations without increasing the number of elements without damaging an SRAM function.SOLUTION: A non-volatile storage part 12a has a threshold element and a resistance change type element R1 serially inserted between a node V1 and a bit line BL of a volatile storage part 11, and a non-volatile storage part 12b has a threshold element and a resistance change type element R2 serially interposed between a node V2 and an inversion bit line BLB of the volatile storage part 11. Transistors Ta1 and Ta2 are turned off, and an appropriate voltage is applied to the bit line and the inversion bit line, and currents in inverse directions corresponding to the storage data of the volatile storage part are allowed to flow to the resistance change type elements R1 and R2 such that a store operation is performed. Also, the appropriate voltage is applied to the bit line and the inversion bit line, and a power supply voltage to the volatile storage part 11 is generated such that a recall operation is performed. |
