| 摘要 |
PROBLEM TO BE SOLVED: To provide a power transistor having low on-resistance.SOLUTION: A semiconductor chip is mounted on a top surface of a header so that a back face of the semiconductor chip faces the top surface of the header, thereby a drain electrode of the semiconductor chip is electrically connected with the header. A source electrode is disposed on a surface of the semiconductor chip so that a part of the source electrode of the semiconductor chip is located between a gate electrode and a source lead of the semiconductor chip in planar view. A part where the gate electrode and first conductive wire are connected is located more apart from the source lead than a part where the source electrode and second conductive wire are connected. |
