发明名称 |
THIN FILM TRANSISTOR, ORGANIC LIGHT-EMITTING DISPLAY APPARATUS INCLUDING THE SAME, AND METHOD OF MANUFACTURING THE THIN FILM TRANSISTOR |
摘要 |
A thin film transistor includes a gate electrode provided on a substrate, a semiconductor layer insulated from the gate electrode and including indium, tin, zinc and gallium oxide, and source/drain electrodes formed on the semiconductor layer. |
申请公布号 |
US2015028300(A1) |
申请公布日期 |
2015.01.29 |
申请号 |
US201414255786 |
申请日期 |
2014.04.17 |
申请人 |
Samsung Display Co., Ltd. |
发明人 |
KIM Kwang-Suk;Jeong Jong-Han;Mo Yeon-Gon |
分类号 |
H01L29/786;H01L29/66;H01L27/32 |
主分类号 |
H01L29/786 |
代理机构 |
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代理人 |
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主权项 |
1. A thin film transistor comprising:
a gate electrode provided on a substrate; a semiconductor layer insulated from the gate electrode, and including gallium, indium, tin and zinc oxide); and source/drain electrodes formed on the semiconductor layer. |
地址 |
Yongin-City KR |