发明名称 THIN FILM TRANSISTOR, ORGANIC LIGHT-EMITTING DISPLAY APPARATUS INCLUDING THE SAME, AND METHOD OF MANUFACTURING THE THIN FILM TRANSISTOR
摘要 A thin film transistor includes a gate electrode provided on a substrate, a semiconductor layer insulated from the gate electrode and including indium, tin, zinc and gallium oxide, and source/drain electrodes formed on the semiconductor layer.
申请公布号 US2015028300(A1) 申请公布日期 2015.01.29
申请号 US201414255786 申请日期 2014.04.17
申请人 Samsung Display Co., Ltd. 发明人 KIM Kwang-Suk;Jeong Jong-Han;Mo Yeon-Gon
分类号 H01L29/786;H01L29/66;H01L27/32 主分类号 H01L29/786
代理机构 代理人
主权项 1. A thin film transistor comprising: a gate electrode provided on a substrate; a semiconductor layer insulated from the gate electrode, and including gallium, indium, tin and zinc oxide); and source/drain electrodes formed on the semiconductor layer.
地址 Yongin-City KR