| 摘要 |
<p>A magnetoresistive magnetic head according to one embodiment uses a current-perpendicular-to-plane magnetoresistive element having a laminate of a free layer, an intermediate layer, and a pinned layer, the pinned layer being substantially fixed to a magnetic field to be detected, wherein either the pinned layer or the free layer includes a Heusler alloy layer represented by a composition of X—Y—Z, wherein X is between about 45 at. % and about 55 at. % and is Co or Fe, Y accounts for between about 20 at. % and about 30 at. % and is one or more elements selected from V, Cr, Mn, and Fe, and Z is between about 20 at. % and about 35 at. % and is one or more elements selected from Al, Si, Ga, Ge, Sn, and Sb, the other layer including a high saturation magnetization material layer having higher saturation magnetization than that of the Heusler alloy, and where the direction of the current flowing perpendicular to plane being a direction in which an electron flows from the Heusler alloy layer into the high saturation magnetization material layer. Additional embodiments are also presented.</p> |
