发明名称 |
METHOD FOR MANUFACTURING LAMINATE INCLUDING XIII GROUP NITRIDE LAYER, METHOD FOR MANUFACTURING XIII GROUP NITRIDE SELF-SUPPORTED SUBSTRATE, METHOD FOR MANUFACTURING MOTHER SUBSTRATE FOR LIGHT-EMITTING DEVICE, AND XIII GROUP NITRIDE TEMPLATE SUBSTRATE |
摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a laminate including a XIII Group nitride layer which can realize a higher yield in comparison to that achieved by a conventional method.SOLUTION: A method for manufacturing a laminate including a XIII Group nitride crystal layer comprises: a template substrate preparation step for preparing a template substrate having a seed substrate, and a XIII Group nitride layer stacked on the seed substrate; a stacking step for stacking at least one or more XIII Group nitride crystal layers on the template substrate into a multilayer structure; and a separation step for separating the seed substrate from the multilayer structure obtained by the stacking step by a laser lift-off method. The template substrate preparation step includes: a first preparation step for forming, on the seed substrate, a lower nitride layer made of a first XIII Group nitride; a second preparation step for forming, on the lower nitride layer, a droplet-containing layer including a second XIII Group nitride and In droplets distributed in the second XIII Group nitride; and a third preparation step for forming, on the droplet-containing layer, an upper nitride layer made of a third XIII Group nitride. |
申请公布号 |
JP2015023240(A) |
申请公布日期 |
2015.02.02 |
申请号 |
JP20130152604 |
申请日期 |
2013.07.23 |
申请人 |
NGK INSULATORS LTD |
发明人 |
ICHIMURA MIKIYA;MAEHARA SOTA;SUGIYAMA TOMOHIKO;KURAOKA YOSHITAKA |
分类号 |
H01L21/205;C23C16/34;H01L33/32 |
主分类号 |
H01L21/205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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