SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To improve characteristics of a semiconductor device having a nonvolatile memory.SOLUTION: A semiconductor device is configured to comprise: control gate electrodes CG, memory gate electrodes MG disposed so as to be adjacent to the control gate electrodes CG, insulating films 3, and insulating films 5 each having a charge storage portion in its inside. The memory gate electrodes MG are composed of a silicon film having first silicon regions 6a disposed on the insulating films 5 and second silicon regions 6b disposed above the first silicon regions 6a. The second silicon regions 6b contain a p-type impurity. Concentration of the p-type impurity of the first silicon regions 6a is configured to be lower than that of the second silicon regions 6b.