| 摘要 |
A method of profiling a layer stack includes a step of receiving an insulating layer, a dielectric hard mask layer, and a layer stack having a patterned metal hard mask layer. The pattern of the metal hard mask layer patterned on the dielectric hard mask layer by using a first dry etching process is transferred. After that, the pattern of the dielectric hard mask layer is transferred to an insulating layer by using a second etching process including at least one halogen containing gas. The second etching process etches the insulating layer and removes part of the patterned metal hard mask layer, thereby, exposing the corner of the dielectric hard mask layer positioned underneath. Part of the dielectric hard mask layer overhanging the insulating layer is removed by using a third dry etching which includes more selective process composite on the dielectric hard mask layer compared to the insulating layer. |
