| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To inhibit erroneous writing to a storage element that is electrically writable only once, in a write control circuit and a semiconductor device. <P>SOLUTION: In a write control circuit, a voltage detection unit 12 detects write voltage supplied to a storage element (electrical fuse element 2) that is electrically writable only once, and when the write voltage exceeds a predetermined threshold voltage, a write control unit 11 stops writing in the electric fuse element 2 regardless of a write signal, so as to inhibit erroneous writing caused by failure in the write voltage which causes overvoltage. <P>COPYRIGHT: (C)2012,JPO&INPIT</p> |
