| 摘要 |
<p>THE INVENTION RELATES TO A METHOD FOR PRODUCING A SEMICONDUCTOR WAFER, COMPRISING IN THE FOLLOWING ORDER: (A) REMOVING MATERIAL FROM BOTH SIDES OF THE SEMICONDUCTOR WAFER SEPARATED FROM A MONOCRYSTAL; (B) CHAMFERING THE EDGE OF THE SEMICONDUCTOR WAFER; (C) GRINDING FRONT AND THE BACK OF THE SEMICONDUCTOR WAFER, WHEREIN ONE SIDE THE OF THE SEMICONDUCTOR WAFER IS HELD BY MEANS OF A WAFER HOLDER, WHILE THE OTHER SIDE IS WORKED WITH A GRINDING TOOL; (D) POLISHING AT LEAST ONE SIDE OF THE SEMICONDUCTOR WAFER WITH A POLISHING CLOTH THAT CONTAINS FIRMLY BOUND ABRASIVES; (E) TREATING BOTH SIDES OF THE SEMICONDUCTOR WAFER WITH AN ETCHING MEDIUM, WHEREIN THE MATERIAL REMOVAL AMOUNT TO NO MORE THAN 1 µM PER SIDE OF THE SEMICONDUCTOR WAFER; (F) POLISHING A FRONT OF THE SEMICONDUCTOR WAFER USING A POLISHING CLOTH CONTAINING NO ABRASIVES AND THE SAME TIME POLISHING A BACK OF THE SEMICONDUCTOR WAFER WITH A POLISHING CLOTH CONTAINING NO ABRASIVES, WHEREIN HOWEVER A POLISHING AGENT CONTAINING AN ABRASIVE IS PLACED BETWEEN THE POLISHING CLOTH AND THE BACK OF THE SEMICONDUCTOR WAFER; (G) POLISHING THE EDGE OF THE SEMICONDUCTOR WAFER; (H) POLISHING THE BACK OF THE SEMICONDUCTOR WAFER WITH A POLISHING CLOTH THAT CONTAINS FIRMLY BOUND ABRASIVES AND AT THE SAME TIME POLISHING THE FRONT OF THE SEMICONDUCTOR WAFER WITH A POLISHING CLOTH THAT CONTAINS NO FIRMLY BOUND ABRASIVES, WHEREIN A POLISHING AGENT CONTAINING AN ABRASIVE IS PLACED BETWEEN THE POLISHING CLOTH AND THE FRONT OF THE SEMICONDUCTOR WAFER.</p> |
