发明名称 |
Apparatuses and methods for improved memory operation times |
摘要 |
Apparatuses and methods for improved memory cycle times are disclosed. An example apparatus may include first and second lines and a sense amplifier. The sense amplifier is directly coupled to the first and second lines. The sense amplifier may sense a differential signal between the first and second lines and amplify the same. An example method may include accessing a first memory cell coupled to a first line of a pair of lines and accessing a second memory cell coupled to a second line of the pair of lines. A differential is sensed between the pair of lines with a sense amplifier coupled directly to the pair of lines, and the sensed differential is amplified. The sense amplifier is coupled to an input/output bus to provide the amplified sensed differential to the input/output bus. |
申请公布号 |
US8958256(B2) |
申请公布日期 |
2015.02.17 |
申请号 |
US201213443661 |
申请日期 |
2012.04.10 |
申请人 |
Micron Technology, Inc. |
发明人 |
Vankayala Vijayakrishna J.;Howe Gary;Winegard John;Surlekar Vipul |
分类号 |
G11C7/00 |
主分类号 |
G11C7/00 |
代理机构 |
Dorsey & Whitney LLP |
代理人 |
Dorsey & Whitney LLP |
主权项 |
1. An apparatus, comprising:
an input/output bus; first and second lines; and a sense amplifier directly coupled to the first and second lines, the sense amplifier configured to sense a differential signal between the first and second lines and amplify the same, wherein the sense amplifier is further configured to be selectively coupled to the input/output bus based, at least in part, on a column select signal and wherein the sense amplifier is further configured to provide the differential signal to the input/output bus. |
地址 |
Boise ID US |