| 发明名称 | Method for forming an air gap around a through-silicon via | ||
| 摘要 | Semiconductor devices with air gaps around the through-silicon via are formed. Embodiments include forming a first cavity in a substrate, filling the first cavity with a sacrificial material, forming a second cavity in the substrate, through the sacrificial material, by removing a portion of the sacrificial material and a portion of the substrate below the sacrificial material, filling the second cavity with a conductive material, removing a remaining portion of the sacrificial material to form an air gap between the conductive material and the substrate, and forming a cap over the air gap. | ||
| 申请公布号 | US8962474(B2) | 申请公布日期 | 2015.02.24 |
| 申请号 | US201113290791 | 申请日期 | 2011.11.07 |
| 申请人 | GLOBALFOUNDRIES Singapore Pte. Ltd. | 发明人 | Yu Hong;Liu Huang |
| 分类号 | H01L21/4763;H01L21/768;H01L23/48 | 主分类号 | H01L21/4763 |
| 代理机构 | Ditthavong & Steiner, P.C. | 代理人 | Ditthavong & Steiner, P.C. |
| 主权项 | 1. A method comprising: forming a first cavity in a substrate; filling the first cavity with a sacrificial material; lining the first cavity with an oxide material prior to filling the first cavity with the sacrificial material; forming a second cavity in the substrate, through the sacrificial material and the oxide material, by removing a portion of the sacrificial material, a portion of the oxide material, and a portion of the substrate below the sacrificial material; filling the second cavity with a conductive material; removing a remaining portion of the sacrificial material to form an air gap between the conductive material and the substrate; and forming a cap over the air gap. | ||
| 地址 | Singapore SG | ||