Methods of growing nitride semiconductors and methods of manufacturing nitride semiconductor substrates

摘要

Methods of growing nitride semiconductor layers including forming nitride semiconductor dots on a substrate and growing a nitride semiconductor layer on the nitride semiconductor dots. The nitride semiconductor layer may be separated from the substrate to be used as a nitride semiconductor substrate.

主权项

1. A method of growing a nitride semiconductor layer, the method comprising:
forming a plurality of nitride semiconductor dots contacting a substrate including using an oxygen-removing process and a halide vapor phase epitaxy method (HVPE), the oxygen-removing process including forming nitride seeds by reacting HCl and NH3 on a substrate, the HVPE method including reacting Ga, HCl and NH3 on the nitride seeds; and growing the nitride semiconductor layer from the nitride semiconductor dots.