发明名称 |
Insulated gate type transistor and display device |
摘要 |
A transistor comprises an active layer of an oxide containing at least one element selected from In, Ga and Zn. The active layer is formed such that a desorption gas monitored as a water molecule by a temperature programmed desorption analysis is 1.4/nm3 or less. |
申请公布号 |
US8962457(B2) |
申请公布日期 |
2015.02.24 |
申请号 |
US200812597219 |
申请日期 |
2008.04.30 |
申请人 |
Canon Kabushiki Kaisha |
发明人 |
Watanabe Tomohiro |
分类号 |
H01L21/20;H01L29/786 |
主分类号 |
H01L21/20 |
代理机构 |
Fitzpatrick, Cella, Harper & Scinto |
代理人 |
Fitzpatrick, Cella, Harper & Scinto |
主权项 |
1. A manufacturing method of a transistor that comprises an active layer of an oxide semiconductor containing In—Ga—Zn—O, the method comprising:
forming the active layer of the oxide semiconductor while controlling water vapor partial pressure in a deposition chamber so that the active layer contains a water molecule content of 1.4/nm3 or less. |
地址 |
Tokyo JP |