| 发明名称 | Method of producing semiconductor device | ||
| 摘要 | A method of producing a semiconductor device, includes: forming a semiconductor layer on a substrate; forming an a recess in the semiconductor layer by dry etching with a gas containing fluorine components, the recess having an opening portion on the surface of the semiconductor layer; forming a fluorine-containing region by heating the semiconductor layer and thus diffusing, into the semiconductor layer, the fluorine components attached to side surfaces and a bottom surface of the recess; forming an insulating film on an inner surface of the recess and on the semiconductor layer; and forming an electrode on the insulating film in a region in which the recess is formed. | ||
| 申请公布号 | US8962427(B2) | 申请公布日期 | 2015.02.24 |
| 申请号 | US201314109865 | 申请日期 | 2013.12.17 |
| 申请人 | Fujitsu Limited | 发明人 | Kamada Yoichi |
| 分类号 | H01L29/66;H01L29/207;H01L29/778;H03F1/32;H03F3/189;H03F3/24;H01L21/28;H01L29/51;H01L29/20;H01L29/423 | 主分类号 | H01L29/66 |
| 代理机构 | Kratz, Quintos & Hanson, LLP | 代理人 | Kratz, Quintos & Hanson, LLP |
| 主权项 | 1. A method of producing a semiconductor device, comprising: forming a semiconductor layer on a substrate; forming a recess in the semiconductor layer by dry etching with a gas containing fluorine components, the recess having an opening portion on the surface of the semiconductor layer; forming a fluorine-containing region by heating the semiconductor layer and thus diffusing, into the semiconductor layer, the fluorine components attached to side surfaces and a bottom surface of the recess; forming an insulating film on an inner surface of the recess and on the semiconductor layer; and forming an electrode on the insulating film in a region in which the recess is formed. | ||
| 地址 | Kawasaki JP | ||