Light emitting device

摘要

A light emitting device includes a light emitting layer having a first side and a second side opposite to the first side; an upper electrode; a current diffusion layer provided between the light emitting layer and the upper electrode and including a first layer on the first side of the light emitting layer and a second layer on a side of the upper electrode, the second layer having a carrier concentration higher than a concentration of the first layer, a recess being formed in a non-forming region of the upper electrode of the current diffusion layer so that a width of the recess decreases toward the light emitting layer, a sidewall of the second layer being at least a part of a sidewall of the recess; and a reflecting layer provided on the second side of the light emitting layer, the upper electrode being provided on the second layer, and the light emitting layer and the current diffusion layer being made of a III-V group compound semiconductor, respectively.

主权项

1. A light emitting device comprising:
a light emitting layer having a first side and a second side opposite to the first side; a first electrode;a current diffusion layer provided between the light emitting layer and the first electrode and including a first layer on the first side of the light emitting layer and a second layer on a side of the first electrode, the second layer having a carrier concentration higher than a concentration of the first layer, a recess being formed in a non-forming region of the first electrode of the current diffusion layer so that a width of the recess decreases toward the light emitting layer, a sidewall of the second layer being at least a part of a sidewall of the recess; and
a reflecting layer provided on the second side of the light emitting layer, the first electrode being provided on the second layer, and the light emitting layer and the current diffusion layer being made of a III-V group compound semiconductor, respectively.