发明名称 |
STRUCTURES AND METHODS FOR RF DE-EMBEDDING |
摘要 |
Electrical structures, methods, and computer program products for radio frequency (RF) de-embedding are provided. A structure includes a first test device, a first through structure corresponding to the first test device, and a first open structure corresponding to the first test device. The structure also includes a second test device having at least one different physical dimension than the first test device but otherwise identical to the first test device, a second through structure corresponding to the second test device, and a second open structure corresponding to the second test device. A method includes determining a first electrical parameter of the first test device in a first DUT structure and a second electrical parameter of the second test device in a second DUT structure based on measured electrical parameters of the first and the second DUT structures, through structures, and open structures. |
申请公布号 |
US2015057980(A1) |
申请公布日期 |
2015.02.26 |
申请号 |
US201414526596 |
申请日期 |
2014.10.29 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
GROVES Robert A.;LU Ning;PUTNAM Christopher S.;THOMPSON Eric |
分类号 |
G01R27/28;G01R23/20 |
主分类号 |
G01R27/28 |
代理机构 |
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代理人 |
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主权项 |
1. A method of radio frequency (RF) de-embedding, comprising:
measuring first scattering parameters (S-parameters) of a first set of structures comprising a first device under test (DUT) structure, a first through structure, and a first open structure, the first through and the first open structures corresponding to the first DUT structure; measuring second S-parameters of a second set of structures comprising a second device under test (DUT) structure, a second through structure, and a second open structure, the second through and the second open structures corresponding to the second DUT structure; determining a first electrical parameter of a first test device in the first DUT structure and a second electrical parameter of a second test device in the second DUT structure based on the first and the second S-parameters; and storing the first and the second electrical parameters. |
地址 |
Armonk NY US |