SILICON CARBIDE POWDER, AND METHOD FOR MANUFACTURING SILICON CARBIDE SINGLE CRYSTAL

摘要

PROBLEM TO BE SOLVED: To provide silicon carbide powder capable of improving the productivity of a silicon carbide single crystal and enlarging the silicon carbide single crystal (e.g., a single crystal wafer) because a sublimation rate is high while reducing the quantity of the silicon carbide left unsublimated in the case where the silicon carbide powder is used as a material for a sublimation recrystallization method.SOLUTION: Silicon carbide powder has a Blaine specific surface area of 250 to 1,000 cm/g and the ratio of the silicon carbide powder having a granularity of more than 0.70 mm to not more than 3.00 mm to the whole quantity of said silicon carbide powder is not more than 50 volume%. Silicon carbide powder 5 contained in a crucible 1 is heated to sublimate so that a single crystal 6 of silicon carbide can be formed on a seed crystal 4 formed on the bottom face portion of a top cover 3.