Fabrication of single crystal AlGaAs layer grown on sapphire substrate using MOCVD system

摘要

The present invention relates to a method of forming an AlGaAs layer grown on a sapphire substrate and a substrate manufactured by using a MOCVD system. More specifically, the present invention relates to a high quality AlGaAs layer grown on a sapphire substrate using a MOCVD system and a manufacturing method thereof. A method of manufacturing a substrate according to the present invention includes: a step of forming a GaAs or AlxGa1-xAs (x<0.05) buffer layer on a sapphire substrate; a step of recrystallizing the GaAs or AlxGa1-xAs (x<0.05) buffer layer formed on the sapphire substrate by a low temperature heating process; and a step of growing an AlGaA layer on a recrystallized GaAs or AlxGa1-xAs (x<0.05) layer. By using MOCVD, a high quality AlGaAs layer having different lattice constant is grown on an Al2O3 substrate. Thereby, an AlGaAs device can be used for a new substrate with transparent and high strength.