CROSS-POINT-TYPE MEMORY AND METHOD OF MANUFACTURING THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a cross-point-type memory having a memory function at an intersection of wiring layers.SOLUTION: A cross-point-type memory 101 includes a plurality of p-type first wiring layers 2A and 2B extending in a first direction, and a plurality of n-type second wiring layers 4A and 4B extending in a second direction crossing the first direction. The first wiring layers 2A and 2B and the second wiring layers 4A and 4B are alternately stacked. The first wiring layers 2A and 2B have a p-type first interlayer compound and the second wiring layers 4A and 4B have an n-type second interlayer compound. At the intersection between the first wiring layers 2A and 2B and the second wiring layers 4A and 4B, a pn junction or a pin junction exists. The pn junction or the pin junction provides rectification used by a memory function. Resistance change regions 5A and 5B capable of changing their resistance exist between the first wiring layers 2A and 2B and the second wiring layers 4A and 4B.